BSS123L6433

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BSS123L6433 datasheet

• Маркировка
  BSS123L6433
• Производитель
  Infineon Technologies
• Описание
  Infineon Technologies BSS123L6433 Mfr Package Description: GREEN, PLASTIC PACKAGE-3 Lead Free: Yes EU RoHS Compliant: Yes China RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: MATTE TIN Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.3600 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.1700 A Feedback Cap-Max (Crss): 6.3 pF DS Breakdown Voltage-Min: 100 V Drain-source On Resistance-Max: 6 ohm
• Количество страниц
  8 шт.
• Форматы файла
  HTML, PDF

  (Для просмотра требуется Adobe Acrobat Reader)

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